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2025擭 5寧20擔攷巑屻婜壽掱2擭師丂媑塱弮栫偺榑暥偑 Applied Physics Express, Volume 18, Number 5 偵宖嵹偝傟傑偟偨丅
Homoepitaxial growth of thick Si-doped 兝-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy
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2025擭 1寧14擔Homoepitaxial growth of thick Si-doped 兝-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy
仸僾儗僗儕儕乕僗偼偙偪傜仺亙擔杮岅斉亜亙English亜
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