????28?N?x
2016 E-MRS Spring Meeting and Exhibit, May. 2-6, 2016, Congress Center in Lille, Lille, France
1)
(Invited) Gallium oxide-based devices for power electronics and beyond
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, T. Kamimura, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: May. 4, L.VIII.1, Oral.
International Conference on Light-Emitting Devices and Their Industrial Applications '16 (LEDIA '16), May. 18-20, 2016, Pacifico Yokohama, Japan
2)
High temperature growth of thick InGaN layers using tri-halide vapor phase epitaxy
M. Meguro, T. Hirasaki, T. Hasegawa, Q. T. Thieu, H. Murakami, Y. Kumagai, B. Monemar, and A. Koukitu
Presentation: May. 19, 19a-LED3-5, Oral.
3)
Growth of In2O3 by Halide Vapor Phase Epitaxy
S. Numata, R. Togashi, K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, and Y. Kumagai
Presentation: May. 19, 19a-LED3-9, Oral.
???p?????w?????H?w????? ??145?????u???C?h?M???b?v????????x????o???N????G?s?Z?p?v, 2016?N6??3??, ???????w???R?L?????p?X
4)
(Invited) HVPE?@????n?`AlN?o???N?????????
?F?J ?`??, ?x?~ ???b, ?R?{ ?描, ?i?? ?O, ??? ??, ???? ??, Monemar Bo, ?? ????
6??3?????\, ????.
5)
(Invited) Ga2O3????z??/?w?e???G?s?^?L?V?????????Z?p
???X?? ????, ?q?? ?N?l, ???? ???a, ?? ??, ?X?? ???, ??? ?a?K, ?e?B?? ?N?@?? ?g?D, ?x?~ ???b, ???? ??, ?F?J ?`??, ???l?}?[ ?{, ???e ????, ?R?? ??L
6??3?????\, ????.
74th Device Research Conference (74th DRC), Jun. 19-22, 2016, University of Delaware, Newark, DE, U.S.A.
6)
(Late News) Ga2O3 Field-Plated Schottky Barrier Diodes with a Breakdown Voltage of Over 1 kV
Keita Konishi, Ken Goto, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akito Kuramata, Shigenobu Yamakoshi, and Masataka Higashiwaki
Presentation: Jun. 21, Oral.
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), Jul. 4-6, 2016, Hakodate Kokusai Hotel, Hakodate, Japan
7)
(Invited) Recent advances in gallium oxide device technologies
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: Jul. 5, A5-1, Oral.
35th Electronic Materials Symposium (EMS-35), Jul. 6-8, 2016, Laforet Biwako, Shiga
8)
High temperature growth of thick InGaN ternary alloy by tri-halide vapor phase epitaxy
N. Matsumoto, M. Meguro, K. Ema, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Jul. 7, Th2-6, Poster.
9)
(Invited) Recent progress in development of gallium oxide power devices
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: Jul. 8, Fr1-1, Oral.
???p?????w???p?d?q????????? ???????u?_??????????b???????????p?v, 2016?N7??29??, ??s??w?????H?t???T?e???C?g?L?????p?X
10)
(Invited) ?_???K???E???p???[?f?o?C?X?J????i????
???e ????, ???? ?}???z?C, ???? ?h??, ???X?? ????, ?? ??, ?x?~ ???b, ???? ??, ?F?J ?`??, ???l?}?[ ?{, ?q?? ?N?l, ?R?? ??L
7??29?????\, ????.
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Aug. 7-12, 2016, Nagoya Congress Center, Nagoya, Japan
11)
(Invited) Progress of homoepitaxial growth technique of thick ??-Ga2O3 layers by halide vapor phase epitaxy
Y. Kumagai, K. Nomura, K. Goto, Q.-T. Thieu, R. Togashi, K. Sasaki, K. Konishi, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, and M. Higashiwaki
Presentation: Aug. 9, Tu1-G04-1, Oral.
12)
(Invited) High-Speed Growth of Thick InGaN Ternary Alloy by Tri-Halide Vapor Phase Epitaxy
H. Murakami, T. Hirasaki, M. Meguro, Q.-T. Thieu, R. Togashi, Y. Kumagai, B. Monemar, and A. Koukitu
Presentation: Aug. 9, Tu3-T09-1, Oral.
13)
(Invited) Point Defect Management in Bulk AlN and AlGaN Epitaxial Films
R. Collazo, I. Bryan, Z. Bryan, D. Alden, S. Mita, B. E. Gaddy, J. Tweedie, A. Franke, R. Kirste, T. Kinoshita, Y. Kumagai, A. Koukitu, D. L. Irving, and Z. Sitar
Presentation: Aug. 10, We1-T09-1, Oral.
14)
(Invited) Growth of AlN substrates by hydride vapor phase epitaxy for opto-electronic devices
T. Kinoshita, T. Nagashima, T. Obata, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
Presentation: Aug. 10, We1-T09-2, Oral.
15)
Influence of growth rate at 1000oC on homoepitaxial growth of ??-Ga2O3 (001) by halide vapor phase epitaxy
Y. Kozakai, K. Nomura, M. Takahashi, K. Goto, K. Sasaki, Q. T. Thieu, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
Presentation: Aug. 11, Th1-T04-6, Oral.
German-Japanese Gallium Oxide Technology Meeting 2016, Sep. 7-9, 2016, Leibniz Institute for Crystal Growth (IKZ), Berlin, Germany
16)
(Invited) Thick and conductivity-controlled homoepitaxial growth of ??-Ga2O3 layers by halide vapor phase epitaxy
Y. Kumagai, K. Goto, R. Togashi, H. Murakami, M. H. Wong, A. Kuramata, S. Yamakoshi, B. Monemar, and M. Higashiwaki
Presentation: Sep. 7, Oral.
17)
(Invited) Progress in Ga2O3 transistor and diode technologies
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, and S. Yamakoshi
Presentation: Sep. 9, Oral.
??77??p?????w??H?G?w?p?u????, 2016?N9??13??-16??, ????b?Z
18)
(Invited) ?_???K???E???G?s?^???J????i?W
???X?? ????, ?q?? ?N?l, ???? ???a, ?? ??, ?x?~ ???b, ???? ??, ?F?J ?`??, ???l?}?[ ?{, ???e ????, ?R?? ??L
9??13?????\, 13p-A22-4, ????.
19)
1kV?ψ?Ga2O3?t?B?[???h?v???[?g?t???V???b?g?L?[?o???A?_?C?I?[?h
???? ?h??, ?? ??, ?x?~ ???b, ???? ??, ?F?J ?`??, Bo Monemar, ?q?? ?N?l, ?R?? ??L, ???e ????
9??15?????\, 15a-B1-3, ????.
11th European Conference on Silicon Carbide & Related Materials (ECSCRM 2016), Sep. 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece
20)
(Invited) Status and Potential of Gallium Oxide Devices - a New Candidate for Future Power Semiconductor Electronics
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, and S. Yamakoshi
Presentation: Sep. 26, Mo2a.01, Oral.
International Workshop on Nitride Semiconductors 2016 (IWN 2016), Oct. 2-7, 2016, Hilton Orlando Lake Buena Vista, Orlando, FL, U.S.A.
21)
(Invited) Recent Progress in the Growth of AlN by HVPE on Native AlN Substrates
Toru Kinoshita, Toru Nagashima, T. Obata, Rie Togashi, R. Schlesser, Ramon Collazo, Akinori Koukitu, Yoshinao Kumagai and Zlatko Sitar
Presentation: Oct. 4, A1.2.01, Oral.
22)
(Late News) Superior Thermal Resistance of N-Polar GaN Surface over Ga-Polar GaN Surface in NH3 added N2 Ambient at High Temperatures above 1200 oC
Y. Kisanuki, R. Togashi, S. Takashima, M. Edo, H. Murakami, A. Koukitu, and Y. Kumagai
Presentation: Oct. 5, D1.6.07, Oral.
???p?????w?????H?w????? ??5????H?w?????m, 2016?N11??7??, ?????_?H??w??????L?????p?X
23)
HVPE?@AlN?P???????\???Si?~??????????????????????
???? ?\??, ???? ?^?l, ?O?? ???N, ?R?{ ?描, ?x?~ ???b, ?i?? ?O, ??? ??, Baxter Moody, ???? ??, Ramon Collazo, ?? ????, Bo Monemar, Zlatko Sitar, ?F?J ?`??
11??7?????\, ?|?X?^?[6, ?|?X?^?[.
24)
?n???C?h?C???????@????c-In2O3?????????
???c ???D, ?x?~ ???b, ??c ?^?R?q, ?{?? ???V, ?? ??, ?q?? ?N?l, ?R?? ??L, Plamen Paskov, Bo Monemar, ?F?J ?`??
11??7?????\, ?|?X?^?[8, ?|?X?^?[.
25)
?g???n???C?h?C???????@??p????N????????K???E???????????
???c ?a?G, ?|?? ??, ???c ??@, ??c ???l, ???? ??, ?F?J ?`??, ?? ????
11??7?????\, ?|?X?^?[37, ?|?X?^?[.
????s???@?l???{?w?p?U?????????????w??Z?p??161?ψ??? ??97?????u?o???N???C?h?M???b?v??????????v, 2016?N11??18??, ???MEBIC?
26)
(Invited) HVPE?@????P?????????A???~?j?E??????J??
?i?? ?O, ??? ??, ?F?J ?`??, ?? ????
11??18?????\, ????.
2016 MRS Fall Meeting and Exhibit, Nov. 27 - Dec. 2, 2016, Hynes Convention Center, Boston, MA, U.S.A.
27)
Mg Ion Implantation Technology for Vertical Ga2O3 Power Devices
Man Hoi Wong, Ken Goto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, and Masataka Higashiwaki
Presentation: Nov. 29, EM11.3.04, Oral.
????s???@?l???{?w?p?U?????????????w??Z?p??161?ψ??? ??98?????u???C?h?M???b?v?_???????????-Ga2O3?????????A?????]???A?f?o?C?X???p?v, 2017?N1??12??-13??, ???l???C?????z?e??
28)
(Invited) ?n???C?h?C???????@????P??????-Ga2O3???????z???G?s?^?L?V????????
?F?J ?`??, ???? ??, ?? ??, ?q?? ?N?l, ???e ????
1??12?????\, ????.
44th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-44), Jan. 15-19, 2017, La Fonda Hotel, Santa Fe, NM, U.S.A.
29)
(Invited) Current State-of-the-Art of Gallium Oxide Power Device Technology
Masataka Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, and S. Yamakoshi
Presentation: Jan. 18, PCSI-WeA10, Oral.
??64??p?????w??t?G?w?p?u????, 2017?N3??14??-17??, ?p?V?t?B?R???l
30)
Mg Ion Implantation Technology for Vertical Ga2O3 Power Devices
Man Hoi Wong, Ken Goto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki
3??15?????\, 15p-315-15, ????.
31)
?p???[?f?o?C?X???????Ga2O3?E?G?n?v???Z?X?Z?p
?q?? ?N?l, ?? ????, ???X?? ????, ?? ??, ?n?? ?M??, ?R?? ?D, ?e?{ ???, ?e?B?? ?N?@?? ?g?D, ???? ???a, ?R?? ??L, ???? ??, ?F?J ?`??, ???e ????
3??16?????\, 16p-502-8, ????.