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????24?N?x
???{?????????w??i?m?\???E?G?s?^?L?V????????????? ??4???????????????????u????, 2012?N4??27??-28??, ??????w???Y?Z?p??????
1)
GaAs(311)A?y??(311)B?????InN??MOVPE????
?x?c ?N?Y, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
4??28?????\, SA-20, ?|?X?^?[.
2)
?l?X??n???Q??????????????p????InGaN-HVPE??????M??w???
???? ?M?p, ??? ?K?j, ???? ??, ?F?J ?`??, ?? ????
4??28?????\, SA-21, ?|?X?^?[.
3)
GaAs(110)???????InN??????????鐅?f?Y??????
???? ??, ?x?c ?N?Y, ?x?~ ???b, ?F?J ?`??, ?? ????
4??28?????\, SA-22, ?|?X?^?[.
4)
(Invited) GaN????????InN?n?C?h???C?h?C???????????????????e??
?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
4??28?????\, IN-3, ????.
The 4th International Symposium on Growth of III-Nitrides (ISGN-4), Jul. 16-19, 2012, St. Petersburg, Russia
5)
Thermodynamic analysis of InGaN-HVPE growth using III-bromides and III-iodides
T. Hirasaki, K. Hanaoka, H. Murakami, Y. Kumagai and A. Koukitu
Presentation: Jul. 17, Tu-32p, Poster.
6)
Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy
H. Murakami, S. Takenaka, T. Hotta, Y. Kumagai and A. Koukitu
Presentation: Jul. 19, Th-12o, Oral.
??73??p?????w??w?p?u????, 2012?N9??11??-14??, ???R??w?????L?????p?X
7)
Improvement of crystalline and optical properties of InN grown on nitrided (0001) sapphire with high NH3 input partial pressures by HVPE
R. Togashi, S. Yamamoto, K. F. Karlsson, H. Murakami, Y. Kumagai, P. O. Holtz, A. Koukitu
9??11?????\, 11p-H10-3, ????.
8)
?Q?i?K?????????@?\??L????V?KHVPE?@????InN??????????????
???? ????, ?R?{ ??, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
9??13?????\, 13a-H9-7, ????.
9)
???f?E???f????????C????????M????????T?t?@?C?A?\???AlN?E?B?X?J?[??`?????J?j?Y??
??` ??q, ???? ??, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
9??13?????\, 13a-H10-8, ????.
10)
?o???NPVT????HVPE????????AlN?????????
?? ???V??, ?v??c ?L?I, ?i?? ?O, ??? ??, R. Dalmau, R. Schlesser, B. Moody, J. Xie, ???? ??, ?F?J ?`??, ?? ????, Z. Sitar
9??13?????\, 13a-H10-9, ????.
11)
HVPE?????t???[?X?^???f?B???OAlN???????????l???????????G???v?\???g???[?]??
???{ ?_, ???? ???M, ?? ?_??, ??? ???v, ?F?J ?`??, ?v??c ?L?I, ?i?? ?O, ??? ??, R. Dalmau, R. Schlesser, B. Moody, J. Xie, ???? ??, ?? ????, Z. Sitar
9??13?????\, 13a-H10-10, ????.
12)
PVT????????????C?h?[?vHVPE?@AlN????????w??????\??????
?i?? ?O, ?v??c ?L?I, ??? ??, R. Schlesser, B. Moody, J. Xie, ???? ??, ?F?J ?`??, ?? ????, Z. Sitar
9??13?????\, 13a-H10-11, ????.
13)
?n???C?h?C???????@????m??ZnO?o???N??????z???G?s?^?L?V????ZnO?????
??? ?Y??, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
9??13?????\, 13p-H7-10, ????.
International Workshop on Nitride Semiconductors 2012 (IWN2012), Oct. 14-19, 2012, Sapporo Convention Center, Sapporo, Japan
14)
Homoepitaxial growth of thick AlN layers by HVPE on bulk AlN substrates prepared by PVT
R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
Presentation: Oct. 15, MoP-GR-48, Poster.
15)
High-temperature heat-treatment of c-, a-, r- and m-plane sapphire substrates in mixed gases of H2 and N2
K. Nomura, S. Hanagata, A. Kunisaki, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Oct. 15, MoP-GR-72, Poster.
16)
Predictive Calculations of Defect Properties using Hybrid Exchange DFT: Applications to Optically Active Impurities in AlN
Benjamin E. Gaddy, Ramón Collazo, Jinqiao Xie, Zachary Bryan, Ronny Kirste, Marc Hoffmann, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Zlatko Sitar, and Douglas L. Irving
Presentation: Oct. 15, MoP-PR-44, Poster.
17)
Effect of high NH3 input partial pressure on hydride vapor phase epitaxy of InN using nitrided (0001) sapphire substrates
R. Togashi, S. Yamamoto, K. F. Karlsson, H. Murakami, Y. Kumagai, P. O. Holtz, and A. Koukitu
Presentation: Oct. 16, TuP-GR-55, Poster.
18)
HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE
R. Imai, S. Yamamoto, R. Togashi, H. Murakami, Y. Kumagai, T. Yamaguchi, T. Araki, Y. Nanishi, and A. Koukitu
Presentation: Oct. 16, TuP-GR-60, Poster.
19)
MOVPE growth of semi-polar InN layers on GaAs(311)A and (311)B substrates
Hisashi Murakami, Tetsuro Hotta, Mayu Suematsu, Tadashi Ohachi, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Oct. 16, TuP-GR-66, Poster.
20)
Prediction of point defect behavior in nitrides using hybrid exchange DFT: Applications to the deep-UV absorption band in AlN
Zlatko Sitar, Benjamin E. Gaddy, Ramon Collazo, Jinquiao Xie, Zachary Bryan, Ronny Kirste, Marc Hoffmann, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, and Douglas L. Irving
Presentation: Oct. 16, TuP-LN-7, Poster.
21)
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy, Zachary Bryan, Ronny Kirste, Marc Hoffmann, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Douglas L. Irving, and Zlatko Sitar
Presentation: Oct. 18, ThP-PR-32, Poster.
22)
Optical and structural properties of intentionally C-doped thick HVPE AlN layers grown on PVT AlN substrates
T. Nagashima, Y. Kubota, T. Kinoshita, R. Schlesser, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
Presentation: Oct. 18, ThP-PR-41, Poster.
Intensive Discussion on Growth of Nitride Semiconductors, Oct. 22-23, 2012, Tohoku University, Sendai, Japan
23)
(Invited) High-Speed Growth of InN Using a Two-Stage Source Generation HVPE System
R. Togashi, R. Imai, S. Yamamoto, H. Murakami, Y. Kumagai, A. Koukitu
Presentation: Oct. 22, Oral.
24)
(Invited) Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxy
Y. Kumagai, Y. Kubota, T. Nagashima, T. Kinoshita, R. Collazo, R. Dalmau, R. Schlesser, B. Moody, J. Xie, H. Murakami, A. Koukitu, Z. Sitar
Presentation: Oct. 23, Oral.
??42?????????????c?iNCCG-42?j, 2012?N11??9??-11??, ??B??w?}???L?????p?X
25)
HVPE?@??p????sapphire(0001)????InN???????????NH3?????????????
?x?~ ???b, ?R?{ ??, K. F. Karlsson, ???? ??, ?F?J ?`??, P. O. Holtz, ?? ????
11??9?????\, 09aC08, ????.
26)
?Q?i?K????????HVPE?@????GaN/sapphire(0001)?e???v???[?g??InN????
???? ????, ?R?{ ??, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
11??9?????\, 09aC09, ????.
27)
HVPE?@????[???O?????????L???鍂?i??AlN?E?F?[?n?[???
?? ???V??, ?v??c ?L?I, ?i?? ?O, ??? ??, Rafael Dalmau, Raoul Schlesser, Baxter Moody, Jinqiao Xie, ???? ??, ?F?J ?`??, ?? ????, Zlatko Sitar
11??9?????\, 09aC10, ????.
28)
???????M?????T?t?@?C?A?\?????f?E???f?????K?X??????????AlN?E?B?X?J?[?`?????J?j?Y??
??` ??q, ???? ??, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
11??9?????\, 09pC01, ????.
29)
InGaN?????g?????????????????闝?_?I?l?@
???? ??, ???? ??, ?F?J ?`??, ?? ????
11??10?????\, 10PS03, ?|?X?^?[.
30)
HVPE?@????m??ZnO??????ZnO???????????\??I?t??????e??
??? ?Y??, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
11??10?????\, 10PS06, ?|?X?^?[.
2012 Collaborative Conference on Crystal Growth (3CG 2012), Dec. 11-14, 2012, Doubletree by Hilton Orlando at SeaWorld, Orlando, FL, U.S.A.
31)
(Invited) Hetero- and Homo-Epitaxy of Thick AlN Layers by Hydride Vapor Phase Epitaxy
Y. Kumagai, Y. Kubota, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, B. Moody, J. Xie, H. Murakami, A. Koukitu, Z. Sitar
Presentation: Dec. 12, A26, Oral.
?????_?H??w?E?d?C??M??w ??9????V???|?W?E???u?i?m?????????R?q?[?????g????w?v, 2012?N12??15??, ?d?C??M??w
32)
Substrate Orientation Dependence of Sapphire Decomposition and Resultant AlN Formation during High-Temperature Heat-Treatment in a Mixed Gas of H2 and N2
Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
12??15?????\, T1, ?|?X?^?[.
33)
Investigation of InN growth on InN/sapphire (0001) MBE-grown templates by HVPE
R. Imai, S. Yamamoto, R. Togashi, H. Murakami, Y. Kumagai, T. Yamaguchi, T. Araki, Y. Nanishi, and A. Koukitu
12??15?????\, T6, ?|?X?^?[.
34)
?V?KHVPE?@??p????InGaN?O???????????????
???? ???n, ???? ?M?p, ???? ???I, ??? ?^?l, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
12??15?????\, T8, ?|?X?^?[.
35)
?M??w??????InGaN-HVPE???????????K??????n??T??
???? ?M?p, ??? ?K?j, ???? ??, ?F?J ?`??, ?? ????
12??15?????\, T18, ?|?X?^?[.
36)
?n???C?h?C???????@????m??ZnO??????z???G?s?^?L?V?????????????????I?t?p?????
??? ?Y??, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
12??15?????\, T24, ?|?X?^?[.
37)
?T?t?@?C?A??????f?E???f?????K?X???????M????????AlN?E?B?X?J?[?`?????J?j?Y???????
??` ??q, ???? ??, ?x?~ ???b, ???? ??, ?F?J ?`??, ?? ????
12??15?????\, T29, ?|?X?^?[. ???D?G?|?X?^?[???\?u?i????v???????
2013 Photonics West, Feb. 2-7, 2013, The Moscone Center, San Francisco, CA, U.S.A.
38)
Deep ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
Toru Kinoshita, Keiichiro Hironaka, Toshiyuki Obata, Toru Nagashima, Rafael F. Dalmau, Raoul Schlesser, Baxter Moody, Jinqiao Xie, Shin-ichiro Inoue, Yoshinao Kumagai, Akinori Koukitu, Zlatko Sitar
Presentation: Feb. 6, 8641-36, Oral.